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Eu activation in beta-Ga_2O_3 MOVPE thin films by ion implantation

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Peres, M. and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Lorenz, K. and Correira, M. R. and Monteiro, T. and Sedrine, N. Ben (2019) Eu activation in beta-Ga_2O_3 MOVPE thin films by ion implantation. ECS Journal of solid state science and technology, 8 (7). Q3097-Q3102. ISSN 2162-8769

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Official URL: http://dx.doi.org/10.1149/2.0191907jss


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Abstract

In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural and optical techniques: X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), cathodoluminescence (CL), photoluminescence (PL), and photoluminescence excitation (PLE). The thin films were implanted with a fluence of 1 x 10^15 Eu.cm^-2 and annealed at 900 degrees C. Neither significant changes in peak width or position nor additional peaks related to Eu complexes were detected in the XRD 2 theta-omega scans. RBS results and SRIM simulation are in good agreement, revealing that no Eu diffusion to the surface occurs during annealing. For the used implantation/annealing conditions, the Eu ion penetration depth reached similar to 130 nm, with a maximum concentration at similar to 50 nm. Furthermore, CL and PL/PLE results evidenced the optical activation of the Eu^3+ in the beta-Ga_2O_3 host. The detailed study of the Eu^3+ intra-4f shell transitions revealed that at least one active site is created by the Eu implantation/annealing in beta-Ga_2O_3 thin films grown on sapphire. Independently of the beta-Ga_2O_3 film thickness, well controlled optical activation of implanted Eu was achieved.


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©The Author(s) 2019. Published by ECS.
The authors acknowledge financial support from FEDER funds through the COMPETE 2020 Programme and National funds through FCT - Portuguese Foundation for Science and Technology (FCT) under the projects UID/CTM/50025/2013, POCI-01-0145-FEDER-028011 & LISBOA-01-0145-FEDER-029666, and UID/FIS/50010/2019. B Mendez and E Nogales are grateful for the financial support from the MINECO (Projects No. MAT-2015-65274-R-FEDER and PCIN-2017-106). We especially thank Dr. Daniela Gogova for providing the as-grown samples of this study, for the availability and the fruitful discussions about β-Ga_2O_3 MOVPE growth.

Uncontrolled Keywords:Structural-properties; Electrical-properties; Annealing analysis; Optical-properties; Gallium oxide; Growth; Luminescence; Ga_2o_3; Layers; Crystals
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:55073
Deposited On:08 May 2019 18:08
Last Modified:09 May 2019 07:28

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