Publication: High quality Al0.37In0.63N layers grown at low temperature (< 300 degrees C) by radio-frequency sputtering
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2019-09
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Nuñez Cascajero, A.
Blasco, R.
Valdueza Felip, Sirona
Montero, Daniel
Naranjo, F. B.
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Elsevier Science Ltd
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Abstract
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300 degrees C). Their structural, chemical and optical properties are investigated as a function of the growth temperature and type of substrate. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis perpendicular to the substrate surface, without parasitic orientations. The layers preserve their Al content at 37% for the whole range of studied growth temperature. The samples grown at low temperatures (RT and 100 degrees C) are almost fully relaxed, showing a closely-packed columnar-like morphology with an RMS surface roughness below 3 nm. The optical band gap energy estimated for layers grown at RT and 100 degrees C on sapphire and glass substrates is of similar to 2.4 eV while it red shifts to similar to 2.03 eV at 300 degrees C. The feasibility of growing high crystalline quality AlInN at low growth temperature even on amorphous substrates open new application fields for this material like surface plasmon resonance sensors developed directly on optical fibers and other applications where temperature is a handicap and the material cannot be heated.
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© 2019 Elsevier Ltd. All rights reserved. This work was partially supported by the projects TEC2014-60483R, TEC2015-71127-C2-2-R, TEC2017-84378-R (Spanish Government); S2013/MIT 2790, P2018/EMT-4308, contract 2018/012 (Community of Madrid); CCG2015/EXP-014 (University of Alcalá). Co-financing from FEDER program is also acknowledged. The authors want to thank Dr. Eva Monroy from CEA-Grenoble (France) for technical and scientific support. The work of D. Montero was supported by the Spanish MINECO under contract BES-2014-067585.