Publication: Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization
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2021
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IEEE
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Abstract
Germanium hyperdoped with deep level donors,
such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a
combination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing.
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©IEEE.
Spanish Conference on Electron Devices (CDE) (13.2021. Sevilla)
This work is part of the project TEC2017-84378-R, funded by MICINN and European Social Fund and project MADRID-PV2 (P2018/EMT-4308) funded by the Comunidad Autónoma de Madrid with the support from FEDER Funds. Parts of this research were carried out at IBC at the Helmholtz–Zentrum Dresden–Rossendorf e. V., a member of the Helmholtz Association. Authors would like to thank Ulrich Kentsch for his assistance with the lowtemperature implantations. D. Caudevilla would also acknowledge grant PRE2018-083798, financed by MICINN and European Social Fund. D. Pastor acknowledges financial support from the program Ramón y Cajal (Grant No. RYC2014-16936).