Publication: Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films
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2022-02
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IEEE-Institute of Electrical and Electronics Engineers
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Abstract
Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.
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©2022Institute of Electrical and Electronics Engineers
This work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116.