Direct observation of potential barrier formation at grain boundaries of SnO_2 ceramics

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Maestre Varea, David and Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier (2004) Direct observation of potential barrier formation at grain boundaries of SnO_2 ceramics. Semiconductor Science and Technology, 19 (11). pp. 1236-1239. ISSN 0268-1242

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Official URL: http://iopscience.iop.org/0268-1242/19/11/004




Abstract

Remote electron beam induced current (REBIC) and cathodoluminescence (CL) modes in the scanning electron microscope (SEM) have been used to investigate SnO2 sintered samples. The study of the electrically active boundaries present in the oxide shows a characteristic peak and trough (PAT) contrast after thermal treatments in oxygen. Temperature-dependent measurements of the REBIC contrast show the presence of a shallow defect level 60 meV below the conduction band. This level is asigned to oxygen species adsorbed on the defect-rich boundaries. Evolution of REBIC contrast of the grain boundaries with excitation density enabled us to perform local measurements of minority carrier diffusion length.


Item Type:Article
Additional Information:

© 2004 IOP Publishing Ltd.
This work has been supported by MCYT (Project MAT 2003-00455). DM acknowledges a grant from MCYT.

Uncontrolled Keywords:Beam-Induced-Current, Electrical-Properties, Oxide; Spectroscopy, Varistors, Defects
Subjects:Sciences > Physics > Materials
ID Code:23245
Deposited On:18 Oct 2013 18:15
Last Modified:13 Feb 2018 15:03

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