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Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier and Albrecht, M. and Stutzmann, M. and Strunk, H.P. (2002) Study of structural defects limiting the luminescence of InGaN single quantum wells. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 80 (17SI). pp. 313-317. ISSN 0921-5107
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Official URL: http://www.sciencedirect.com/science/article/pii/S0921510700006486
Abstract
InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation, Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.
Item Type: | Article |
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Additional Information: | © 2001 Elsevier Science B.V. All rights reserved. |
Uncontrolled Keywords: | Structure Laser-Diodes, Light-Emitting-Diodes, Degradation, Blue, Cathodoluminescence, Stress |
Subjects: | Sciences > Physics > Materials |
ID Code: | 23346 |
Deposited On: | 29 Oct 2013 19:44 |
Last Modified: | 13 Feb 2018 15:35 |
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