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Albrecht, M. and Cremades Rodríguez, Ana Isabel and Krinke, J. and Christiansen, S. and Ambacher, O. and Piqueras de Noriega, Javier and Strunk, H. P. and Stutzmann, M. (1999) Carrier recombination at screw dislocations in n-type AlGaN layers. Phisica Status Solidibi B-Basic Research, 216 (1). pp. 409-414. ISSN 0370-1972
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/(SICI)1521-3951(199911)216:1%3C409::AID-PSSB409%3E3.0.CO;2-K/abstract
Abstract
We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany. |
| Uncontrolled Keywords: | Chemical-Vapor-Deposition, Threading-Edge, Gan Films, Scattering |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 23447 |
| Deposited On: | 21 Nov 2013 13:27 |
| Last Modified: | 13 Feb 2018 14:42 |
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