Carrier recombination at screw dislocations in n-type AlGaN layers



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Albrecht, M. and Cremades Rodríguez, Ana Isabel and Krinke, J. and Christiansen, S. and Ambacher, O. and Piqueras de Noriega, Javier and Strunk, H. P. and Stutzmann, M. (1999) Carrier recombination at screw dislocations in n-type AlGaN layers. Phisica Status Solidibi B-Basic Research, 216 (1). pp. 409-414. ISSN 0370-1972

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We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.

Item Type:Article
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© 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany.
International Conference on Nitride Semiconductors (3. 1999. Montpellier, Francia).

Uncontrolled Keywords:Chemical-Vapor-Deposition, Threading-Edge, Gan Films, Scattering
Subjects:Sciences > Physics > Materials
ID Code:23447
Deposited On:21 Nov 2013 13:27
Last Modified:13 Feb 2018 14:42

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