Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals



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Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier and Remón, A. and García, J. A. and Santos, M. T. and Dieguez, E. (1998) Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals. Journal of Applied Physics , 83 (12). pp. 7948-7952. ISSN 0021-8979

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Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of EGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched EGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples.

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© 1998 American Institute of Physics.
This work has been supported by DGES (Project No. PB 93-1256) and CICYT (Project No. TXT96-1688).

Uncontrolled Keywords:Bi_4Ge_3O_12, Cathodoluminescence, Photoluminescence, Interface, Growth
Subjects:Sciences > Physics > Materials
ID Code:23585
Deposited On:21 Nov 2013 13:45
Last Modified:07 Feb 2014 11:04

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