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Study of defects in chemical-vapor-deposited diamond films by cross-sectional cathodoluminescence



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Cremades Rodríguez, Ana Isabel and Domínguez-Adame Acosta, Francisco and Piqueras de Noriega, Javier (1993) Study of defects in chemical-vapor-deposited diamond films by cross-sectional cathodoluminescence. Journal of Applied Physics , 74 (9). pp. 5726-5728. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.354189


Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemical vapor deposited diamond films. The CL emission is mainly localized at the grain boundaries of the columnar grains. The concentration of dislocation related radiative centers is higher in boundaries parallel to the growth axis than in boundaries parallel to the sample surface. The opposite occurs with the concentration of centers related to the presence of nitrogen.

Item Type:Article
Additional Information:

© 1993 American Institute of Physics.

This work has been supported by DGICYT (Project PB-1017). Thanks are due to Dr. E. Wolfgang for drawing our attention to the CL cross sectional measurements.

Uncontrolled Keywords:Sintered Diamond, Impurities, Crystals
Subjects:Sciences > Physics > Materials
ID Code:23655
Deposited On:22 Nov 2013 17:04
Last Modified:16 Dec 2014 10:42

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