Two-dimensional Zn_k In_2O_(k+3) nanostructures: synthesis, growth mechanism, self-assembly, and luminescence



Downloads per month over past year

Bartolomé Vílchez, Javier and Maestre Varea, David and Amati, Mateo and Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier (2013) Two-dimensional Zn_k In_2O_(k+3) nanostructures: synthesis, growth mechanism, self-assembly, and luminescence. Journal of Nanoparticle Research, 15 (10). ISSN 1388-0764

[thumbnail of CremadesAna65.pdf] PDF
Restringido a Repository staff only


Official URL:


Indium-zinc oxide nanostructures, such as nanosheets, nanobelts, and wires formed by oriented stacks of nanoplates have been grown by a controlled thermal evaporation method without the use of a foreign catalyst. Surface features in the stacked hexagonal nanoplates suggest a dislocation-driven growth mechanism for these structures. A growth model for these stacks is proposed based on changes in velocity growth rate between the outer and the inner part of the plates. Zn incorporation has been investigated by means of energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and selected area electron diffraction. The formation of Zn_k In_2O_(k+3) ternary compounds has been demonstrated. Cathodoluminescence emission and its correlation with the morphology of the structures and Zn content have been studied.

Item Type:Article
Additional Information:

© Springer Science+Business Media Dordrecht 2013.
This work has been supported by Ministerio de Economía y Competitividad (Projects MAT 2012-31959, and Consolider CSD 2009-00013). J. Bartolomé acknowledges the financial support from Universidad Complutense de Madrid.

Uncontrolled Keywords:Ray Photoemission-Spectroscopy, Photoluminescence Properties, Eshelby Twist, Nanowires, Driven, Microstructures, Dislocations, Nanosheets, Nanowalls, Nanocubes
Subjects:Sciences > Physics > Materials
ID Code:23723
Deposited On:27 Nov 2013 18:57
Last Modified:22 Jan 2020 12:44

Origin of downloads

Repository Staff Only: item control page