Doped gallium oxide nanowires for photonics



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Nogales Díaz, Emilio and López, I. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Lorenz, K. and Alves, E. and García, J.A. (2012) Doped gallium oxide nanowires for photonics. In Oxide-based materials and devices III. Proceedings- Spie the International Society for Optical Engineering (8263). Spie-int soc optical engineering. ISBN 978-0-8194-8906-7

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Monoclinic gallium oxide, beta-Ga_2O_3, is a transparent conducting oxide (TCO) that presents one of the widest band gaps among this family of materials. Its characteristics make it highly interesting for applications in UV - visible - IR optoelectronic and photonic devices. On the other hand, the morphology of nanowires made of this oxide presents specific advantages for light emitting nanodevices, waveguides and gas sensors. Control of doping of the nanostructures is of the utmost importance in order to tailor the behavior of these devices. In this work, the growth of the nanowires is based on the vapor-solid (VS) mechanism during thermal annealing treatment while the doping process was carried out in three different ways. In one of the cases, doping was obtained during the growth of the wires. A second method was based on thermal diffusion of the dopants after the growth of undoped nanowires, while the third method used ion implantation to introduce optically active ions into previously grown nanowires. The study of the influence of the different dopants on the luminescence properties of gallium oxide nanowires is presented. In particular, transition metals and rare earths such as Cr, Gd, Er or Eu were used as optically active dopants that allowed selection of the luminescence wavelength, spanning from the UV to the IR ranges. The benefits and drawbacks of the three different doping methods are analyzed. The waveguiding behavior of the doped nanowires has been studied by room temperature micro-photoluminescence.

Item Type:Book Section
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© 2012 SPIE.
Conference on Oxide-Based Materials and Devices (3. 2012.San Francisco)

Uncontrolled Keywords:Beta-Ga_2O_3
Subjects:Sciences > Physics > Materials
ID Code:24024
Deposited On:15 Jan 2014 18:11
Last Modified:31 Dec 2020 00:02

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