Publication: Doped gallium oxide nanowires for photonics
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Publication Date
2012
Authors
López, I.
Méndez Martín, Bianchi
Piqueras de Noriega, Javier
Lorenz, K.
Alves, E.
García, J.A.
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Spie-int soc optical engineering
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Abstract
Monoclinic gallium oxide, beta-Ga_2O_3, is a transparent conducting oxide (TCO) that presents one of the widest band gaps among this family of materials. Its characteristics make it highly interesting for applications in UV - visible - IR optoelectronic and photonic devices. On the other hand, the morphology of nanowires made of this oxide presents specific advantages for light emitting nanodevices, waveguides and gas sensors. Control of doping of the nanostructures is of the utmost importance in order to tailor the behavior of these devices. In this work, the growth of the nanowires is based on the vapor-solid (VS) mechanism during thermal annealing treatment while the doping process was carried out in three different ways. In one of the cases, doping was obtained during the growth of the wires. A second method was based on thermal diffusion of the dopants after the growth of undoped nanowires, while the third method used ion implantation to introduce optically active ions into previously grown nanowires. The study of the influence of the different dopants on the luminescence properties of gallium oxide nanowires is presented. In particular, transition metals and rare earths such as Cr, Gd, Er or Eu were used as optically active dopants that allowed selection of the luminescence wavelength, spanning from the UV to the IR ranges. The benefits and drawbacks of the three different doping methods are analyzed. The waveguiding behavior of the doped nanowires has been studied by room temperature micro-photoluminescence.
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© 2012 SPIE.
Conference on Oxide-Based Materials and Devices (3. 2012.San Francisco)
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[1] Binet, L. and Gourier D., “Origin of the blue luminescence of β-Ga_2O_3”, J. Phys. Chem. Solids 59(8), 1241 (1998).
[2] Song, Y. P. , Zhang, H. Z., Lin, C., Zhu, Y. W., Li, G. H., Yang, F. H. and Yu, D. P., “Luminescence emission originating from nitrogen doping of β-Ga2O3 nanowires” Phys. Rev. B 69, 075304 (2004).
[3] Shimamura, K., Villora, E.G., Ujiie, T. and Aoki, K., “Excitation and photoluminescence of pure and Si-doped b-Ga_2O_3 single crystals”, Appl. Phys. Lett. 92, 201914 (2008).
[4] Villora, E.G., Shimamura, K., Yoshikawa, Y., Ujiie, Y. and Aoki, K., “Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping”, Appl. Phys. Lett. 92, 202120 (2008).
[5] Nogales, E., Mendez, B. and Piqueras, J., “Cathodoluminescence from beta-Ga2O3 nanowires”, Appl. Phys. Lett. 86, 113112 (2005).
[6] Arnold, S. P., Prokes, S. M., Perkins, F. K., and Zaghloul M. E., “Design and performance of a simple, room-temperature Ga2O3 nanowire gas sensor”, Appl. Phys. Lett. 95, 103102 (2009).
[7] Tippins, H. H., “Optical absorption and photoconductivity in band edge of beta-Ga_2O3”, Phys. Rev. 140, A316 (1965).
[8] Al-Kuhaili, M. F., Durrani, S. M. A. and Khawaja, E. E., “Optical properties of gallium oxide films deposited by electron-beam evaporation”, Appl. Phys. Lett. 83, 4533 (2003).
[9] Barth, S., Hernandez-Ramirez, F., Holmes, J. D. and Romano-Rodriguez, A., “Synthesis and applications of one-dimensional semiconductors”, Prog. Materials Sci. 55, 563 (2010).
[10] Law, M., Sirbuly, D. J., Johnson, J. C., Goldberger, J., Saykally, R. J. and Yang, P., “Nanoribbon waveguides for subwavelength photonics integration”, Science 305, 1269 (2004).
[11] Nogales, E., Garcia, J.A., Mendez, B. and Piqueras, J., “Doped gallium oxide nanowires with waveguiding behavior”, Appl. Phys. Lett. 91, 133108 (2007).