Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires



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Nogales Díaz, Emilio and Sánchez, B. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2009) Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires. Superlattices and Microstructures, 45 (4 May.). pp. 156-160. ISSN 0749-6036

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Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed.

Item Type:Article
Additional Information:

© 2008 Elsevier Ltd..
This work was supported by MEC (Project MAT 2006-01259)
International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008-2009. Toledo).

Uncontrolled Keywords:Luminescence, Beta-Ga_2O_3
Subjects:Sciences > Physics > Materials
ID Code:24273
Deposited On:22 Jan 2014 17:14
Last Modified:31 Dec 2020 00:02

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