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Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and García, J. A. (2009) Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices. Nanotechnology, 20 (11). ISSN 0957-4484
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Official URL: http://iopscience.iop.org/0957-4484/20/11/115201
Abstract
Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped ß-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu^(3+) intraionic transitions from ß-Ga_2O_3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown.
Item Type: | Article |
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Additional Information: | © 2009 IOP 1 Publishing Ltd. |
Uncontrolled Keywords: | Nanowires, Silicon |
Subjects: | Sciences > Physics > Materials |
ID Code: | 24274 |
Deposited On: | 22 Jan 2014 17:23 |
Last Modified: | 31 Dec 2020 00:02 |
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