Visible and infrared luminescence study of Er doped β-Ga_2O_3 and Er_3 Ga_5O_12



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Nogales Díaz, Emilio and García, J. A. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Lorenz, K. and Alves, E. (2008) Visible and infrared luminescence study of Er doped β-Ga_2O_3 and Er_3 Ga_5O_12. Journal of Physics D: Applied Physics, 41 (6). ISSN 0022-3727

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The luminescence properties of Er doped β-Ga_2O_3 and of the erbium gallium garnet Er_3 Ga_5O_12(ErGG) have been investigated both in the visible and in the infrared (IR) ranges by means of photoluminescence (PL). Doping of the β-Ga_2O_3 was obtained in two different ways: erbium ion implantation into β-Ga_2O_3 and high temperature annealing of a mixture of Er_2O_3 and Ga_2_O3 powders. X-ray diffraction shows that the latter samples present both β-Ga_2O_3 and ErGG phases. The PL studies demonstrate that the beta-Ga2O3 in these samples is doped with erbium. The differences in the luminescence emission and excitation peaks of the Er^3+ ions in these two hosts are studied through selective PL measurements. Strong near IR emission and weak green emission from Er^3+ in the β-Ga_2O_3 matrix is obtained. The opposite is obtained for Er^3+ in ErGG when excited under the same conditions. Room temperature luminescence is observed from erbium in the two hosts.

Item Type:Article
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© 2008 IOP Publishing Ltd.
This Work Has Been Supported By MEC (Project MAT 2006-01259). KL Acknowledges Support By FCT, Portugal.

Uncontrolled Keywords:Erbium, Gan, Silicon, Oxide
Subjects:Sciences > Physics > Materials
ID Code:24285
Deposited On:22 Jan 2014 17:39
Last Modified:31 Dec 2020 00:02

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