Sn doped GeO_2 nanowires with waveguiding behavior



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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2008) Sn doped GeO_2 nanowires with waveguiding behavior. Nanotechnology, 19 (45). ISSN 0957-4484

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Sn doped GeO_2 nanowires and microwires have been grown by an evaporation-deposition method, using a mixture of Ge and SnO_2 powders as precursors. Comparison with undoped GeO_2 nanowires grown by the same method shows that the presence of Sn prevents the formation of sharp bends, which makes the wires more suitable for waveguiding applications. Incorporation of about 0.5 at.% of Sn into the wires influences their morphology and gives rise to wires showing two different cross-sectional dimensions along the growth axis. Sn does not influence the luminescence spectra in the visible range but causes the appearance of emission bands in the near-infrared range. The waveguiding behavior of the Sn doped wires for green and red laser light has been demonstrated.

Item Type:Article
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© 2008 IOP Publishing Ltd.
This work was supported by MEC (Project MAT2006-01259).

Uncontrolled Keywords:Oxide Nanowires, ZnO, Nanostructures, Whiskers
Subjects:Sciences > Physics > Materials
ID Code:24286
Deposited On:22 Jan 2014 17:30
Last Modified:31 Dec 2020 00:02

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