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Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope

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StorgardsStorgards, J. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Storgards, M. and Dimroth, F. and Bett, A.W. (2004) Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope. Journal of Physics: Condensed Mater, 16 (2, 17S). ISSN 0953-8984

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Official URL: http://iopscience.iop.org/0953-8984/16/2/030




Abstract

The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of defects, as misfit dislocations, in some of the structures. The luminescence bands observed in the GaSb layers are related to near band edge recombination and to an excess of Ga. In the case of AlGaSb/GaSb heterostructure emission bands related to the ternary compound and to donor-acceptor recombination are detected. In addition, with the aid of a scanning tunnelling microscope (STM), local electronic properties, such as conductance and surface energy gap, were studied in sample cross-sections. The results obtained from imaging and spectroscopy modes of STM enabled us to image the single AlGaSb layer.


Item Type:Article
Additional Information:

© 2004 IOP Publishing Ltd.
This work was carried out in the framework of a European network project (HPRN-CT-2001-00199). Partial support of
MCYT (MAT2000-2119) is acknowledged.
International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, (BIAMS 2003) (7. 2003. Lille, Francia)

Uncontrolled Keywords:Vapor-Phase Epitaxy, Si(111)2x1 Surface, Doped Gasb, Photoluminescence, Spectroscopy, Growth
Subjects:Sciences > Physics > Materials
ID Code:24390
Deposited On:29 Jan 2014 16:15
Last Modified:31 Dec 2020 00:02

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