Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope

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Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plugaru, R (2003) Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope. Nanotechnology, 14 (1). pp. 65-68. ISSN 0957-4484

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Official URL: http://iopscience.iop.org/0957-4484/14/1/315




Abstract

Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm.


Item Type:Article
Additional Information:

© 2003 IOP Publishing Ltd.
This work has been supported by MCYT (Project MAT 2000-2119). RP acknowledges MECD for the research grant SB2000-0164.

Uncontrolled Keywords:Luminescence Properties, Tunneling-Microscopy, Porous Silicon, States
Subjects:Sciences > Physics > Materials
ID Code:24415
Deposited On:29 Jan 2014 16:23
Last Modified:31 Dec 2020 00:02

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