STM-REBIC study of nanocrystalline and crystalline silicon



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Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plugaru, R. (2003) STM-REBIC study of nanocrystalline and crystalline silicon. In Spatially resolved characterization of local phenomena in materials and nanostructures. MRS Online Proceedings Library (738). Materials Research Society. ISBN 1-55899-675-3

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Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. The nc-Si films were obtained by boron implantation of amorphous silicon layers with an average nanocrystal size of about 10 nm. STM current constant images reveal a cell structure in the nc-Si films which was also revealed in the STM remote electron beam induced current (REBIC) images with a resolution of up to 20 nm. The contrast in the STM-REBIC images indicate the existence of space charge regions at the boundaries. The influence of the thermal treatment on the cell structure was studied. For comparison, SEM-REBIC and STM-REBIC images from c-Si wafer were obtained.

Item Type:Book Section
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© Materials Research Society
Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures (2002. Boston)

Uncontrolled Keywords:Beam-Induced Current, Scanning-Tunneling-Microscopy, Grain-Boundaries, Porous Silicon, Luminescence, Spectroscopy
Subjects:Sciences > Physics > Materials
ID Code:24416
Deposited On:30 Jan 2014 17:28
Last Modified:30 Jan 2014 17:28

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