Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals

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Hidalgo Alcalde, Pedro and Plaza, J. L. and Méndez Martín, Bianchi and Dieguez, E. and Piqueras de Noriega, Javier (2002) Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals. Journal of Physics: Condensed Mater, 14 (48). pp. 13211-13215. ISSN 0953-8984

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Official URL: http://iopscience.iop.org/0953-8984/14/48/370




Abstract

The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.


Item Type:Article
Additional Information:

© 2002 IOP Publishing Ltd.
This work was supported by MCYT (Project MAT2000-2119).
Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)

Uncontrolled Keywords:Doped Gasb, Erbium, Luminescence, Centers, Silicon
Subjects:Sciences > Physics > Materials
ID Code:24424
Deposited On:31 Jan 2014 16:50
Last Modified:31 Dec 2020 00:02

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