Publication: Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals
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2002-12-16
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Institute of Physics
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Abstract
The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.
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© 2002 IOP Publishing Ltd.
This work was supported by MCYT (Project MAT2000-2119).
Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)
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