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Plaza, J. L: and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. (2002) Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique. Journal of Crystal Growth, 241 (3). pp. 283-288. ISSN 0022-0248
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Official URL: http://www.sciencedirect.com/science/article/pii/S0022024802012496
Abstract
Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot.
| Item Type: | Article |
|---|---|
| Additional Information: | © 2002 Published by Elsevier Science B.V. |
| Uncontrolled Keywords: | Gallium-Phosphide, Luminescence, Silicon, Ytterbium, Gaas, Inp, Gap |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 24439 |
| Deposited On: | 31 Jan 2014 17:11 |
| Last Modified: | 31 Dec 2020 00:02 |
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