Luminescence from erbium oxide grown on silicon



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Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plugaru, R and García, J. A. and Tate, T. J. (2002) Luminescence from erbium oxide grown on silicon. In Progress in Semiconductor Materials for Optoelectronic Applications. MRS Online Proceedings Library (692). Materials Research Society, pp. 455-460. ISBN 1-55899-628-1

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The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two type., of substrates used are explained in terms of the different types of erbium centers formed by taking into account the substrate properties and the thermal treatments during growth. For comparison, erbium implanted and oxygen coimplanted crystalline and amorphous silicon have been also investigated by luminescence techniques. In the implanted samples, the sharp transitions from erbium ions in the visible range were quenched and the main emission corresponds to the intraionic transitions in Er3+ ions in the infrared range peaked at 1,54 mum.

Item Type:Book Section
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© 2002 Materials Research Society.
Conference on Progress in Semiconductor Materials for Optoelectron Applications held at the 2001 MRS Fall Meeting. (2001. Boston).
This work was supported by DGI (project MAT2001-2119) and by the Scientific Cooperation Program between Spain and Romania.

Uncontrolled Keywords:Er, Si, Photoluminescence
Subjects:Sciences > Physics > Materials
ID Code:24563
Deposited On:19 Mar 2014 15:31
Last Modified:19 Mar 2014 15:31

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