Scanning tunnelling microscopy and spectroscopy of nanocrystalline silicon films



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Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plugaru, R (2001) Scanning tunnelling microscopy and spectroscopy of nanocrystalline silicon films. Semiconductor Science and Technology, 16 (9). pp. 789-792. ISSN 0268-1242

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Scanning tunnelling microscopy (STM) has been sometimes applied in recent years to characterize porous silicon. In contrast, other forms of light emitting Si, such as nanocrystalline silicon films, prepared by different methods, have not been, or are only occasionally, studied by STM related techniques. In this paper STM and spectroscopy measurements have been performed on nanocrystalline silicon films obtained by low pressure chemical vapour deposition followed by boron implantation. Subsequent annealing of the samples caused an increase of the crystallites size. Scanning tunnelling spectroscopy enabled us to determine the surface band gap in films. In all annealed nanocrystalline films the value of this gap is similar to the value in bulk Si. However, a large value of the gap, of about 4.5 eV, is measured in as-implanted films. The different behaviour is explained in terms of a quantum confinement effect related to the nanocrystal's size.

Item Type:Article
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© 2001 IOP Publishing Ltd.
This work was supported by DGES (PB96-0639) and by the Scientific Cooperation Program between Spain and Romania.

Uncontrolled Keywords:Semiconductors, Luminescence, Photoluminescence, Silicon
Subjects:Sciences > Physics > Materials
ID Code:24564
Deposited On:13 Mar 2014 12:45
Last Modified:31 Dec 2020 00:02

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