Effect of In doping in GaSb crystals studied by cathodoluminescence

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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P: S. and Dieguez, E. (1999) Effect of In doping in GaSb crystals studied by cathodoluminescence. Semiconductor Science and Technology, 14 (10). pp. 901-904. ISSN 0268-1242

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Official URL: http://iopscience.iop.org/0268-1242/14/10/304




Abstract

The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb.


Item Type:Article
Additional Information:

© 1999 IOP Publishing Ltd.
This work has been supported by the DGES (project No PB96-0639) and CICYT (projects ESP95-0148 and ESP98-1340).

Uncontrolled Keywords:Gallium Antimonide
Subjects:Sciences > Physics > Materials
ID Code:24673
Deposited On:14 Mar 2014 17:38
Last Modified:30 Dec 2020 00:01

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