Publication: Scanning tunneling spectroscopy study of erbium doped GaSb crystals
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1999-08-01
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American Institute of Physics
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Abstract
Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data.
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© 1999 American Institute of Physics.
This work was supported by DGES (Project No. PB96-0639) and by CICYT (Project Nos. ESP95-0148 and ESP98-1340)
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