Cathodoluminescence from nanocrystalline silicon films and porous silicon



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Piqueras de Noriega, Javier and Méndez Martín, Bianchi and Plugaru, R. and Craciun, G. and García, J. A. and Remon, A. (1999) Cathodoluminescence from nanocrystalline silicon films and porous silicon. Applied physics A-Materials Science&Processing, 68 (3). pp. 329-331. ISSN 0947-8396

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Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Spectral changes induced by annealing and implantation treatments of the films suggest that the presence of nanocrystals is the origin of the observed CL.

Item Type:Article
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© Springer.
This work was supported by NATO (Grant HTECH. CRG 961392) and DGES (Project PB96-0639).

Uncontrolled Keywords:Luminescence Properties, Photoluminescence, Emission, Si
Subjects:Sciences > Physics > Materials
ID Code:24678
Deposited On:18 Mar 2014 16:12
Last Modified:31 Dec 2020 00:02

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