Microwave noise modeling of InP based MODFETs biased for low power consumption



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Miranda Pantoja, José Miguel and Sebastián Franco, José Luis (2000) Microwave noise modeling of InP based MODFETs biased for low power consumption. IEEE Microwave and Guided Wave Letters, 10 (11). pp. 469-471. ISSN 1051-8207

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Official URL: http://dx.doi.org/10.1109/75.888835


This paper presents the fabrication, experimental characterization and modeling of 0.15 mum gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T-D) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed, In fact, T-D can decrease with increasing drain currents, and suffers a strong increase as a function of the drain voltage even at very low values of the drain current. However, all of these effects can be qualitatively explained from physical considerations.

Item Type:Article
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© 2000 IEEE.

Uncontrolled Keywords:Gate.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:24709
Deposited On:18 Mar 2014 09:58
Last Modified:10 Dec 2018 14:58

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