Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique



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Plaza, J. L. and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Castaño, J. L. and Dieguez, E. (1999) Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique. Journal of crystal growthJ, 198 (pt. 1). pp. 379-383. ISSN 0022-0248

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Official URL: http://www.sciencedirect.com/science/article/pii/S0022024898011002


The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.

Item Type:Article
Additional Information:

© 1999 Elsevier Science B.V.
Conference on Crystal Growth, held in Conjunction with the 10th International Conference on Vapor Growth and Epitaxy (ICCG-12/ICVGE-10) (12. 1998. Jerusalen).
This work has been supported by CICYT (ESP95-0148 and 95-0086-OP) and DGES PB96-
0639 (CICYT, Spain).

Uncontrolled Keywords:Liquid-Phase Epitaxy, Gallium Antimonide, Longitudinal Macrosegregation, Thermal-Convection, Erbium, Gaas, Photoluminescence
Subjects:Sciences > Physics > Materials
ID Code:24710
Deposited On:18 Mar 2014 16:25
Last Modified:31 Dec 2020 00:02

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