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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plaza, J. and Dieguez, E. (1998) Effect of erbium doping on the defect structure of GaSb crystals. Semiconductor Science and Technology, 13 (12). pp. 1431-1433. ISSN 0268-1242
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Official URL: http://iopscience.iop.org/0268-1242/13/12/017
Abstract
GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1998 IOP Publishing Ltd. |
| Uncontrolled Keywords: | Phase Epitaxy, Cathodoluminescence, Photoluminescence, Spectroscopy, Excitation |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 24713 |
| Deposited On: | 18 Mar 2014 16:30 |
| Last Modified: | 31 Dec 2020 00:02 |
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