Effect of erbium doping on the defect structure of GaSb crystals

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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plaza, J. and Dieguez, E. (1998) Effect of erbium doping on the defect structure of GaSb crystals. Semiconductor Science and Technology, 13 (12). pp. 1431-1433. ISSN 0268-1242

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Official URL: http://iopscience.iop.org/0268-1242/13/12/017




Abstract

GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.


Item Type:Article
Additional Information:

© 1998 IOP Publishing Ltd.
This work has been supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).

Uncontrolled Keywords:Phase Epitaxy, Cathodoluminescence, Photoluminescence, Spectroscopy, Excitation
Subjects:Sciences > Physics > Materials
ID Code:24713
Deposited On:18 Mar 2014 16:30
Last Modified:31 Dec 2020 00:02

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