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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Dutta, P: S. and Piqueras de Noriega, Javier and Dieguez, E. (1998) Luminescence properties of transition-metal-doped GaSb. Physical Review B, 57 (11). pp. 6479-6484. ISSN 0163-1829
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Official URL: http://prb.aps.org/abstract/PRB/v57/i11/p6479_1
Abstract
The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has been investigated. These dopants suppress the native acceptor concentration to varying extent. The behavior of Ru has been found to be different from the behavior of V and Cr. In particular the complete disappearance of the 777 meV (band A) emission has been observed in GaSb:Ru with a low doping level. A peak at 767 meV is also seen in this sample which, to the best of our knowledge, has not been previously observed in GaSb. The CL results have been complemented by x-ray-microanalysis measurements to ascertain the effect of doping level on the luminescence properties.
| Item Type: | Article |
|---|---|
| Additional Information: | © The American Physical Society. |
| Uncontrolled Keywords: | Sb-Rich Solutions, Gallium Antimonide, Photoluminescence, Cathodoluminescence, Epitaxy |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 24715 |
| Deposited On: | 18 Mar 2014 16:36 |
| Last Modified: | 06 Jun 2014 17:38 |
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