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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. (1998) Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy. In Defect and Impurity Engineered semiconductors II. MRS Online Proceedings Library (510). Materials Research Society, pp. 639-644. ISBN 1-55899-416-5
Official URL: http://dx.doi.org/10.1557/PROC-510-639
Abstract
Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.
| Item Type: | Book Section |
|---|---|
| Additional Information: | © Materials Research Society. |
| Uncontrolled Keywords: | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Coatings & Films |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 24741 |
| Deposited On: | 20 Mar 2014 18:18 |
| Last Modified: | 06 Jun 2014 17:35 |
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