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Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP



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Miranda Pantoja, José Miguel and Sebastián Franco, José Luis (2000) Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP. IEEE Transactions on Microwave Theory and Techniques, 48 (7, P.2). pp. 1275-1279. ISSN 0018-9480

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Official URL: http://dx.doi.org/10.1109/22.853472


A simulation at microscopic level of the intrinsic microwave noise temperature associated to GaAs and InP semiconductors under far from equilibrium conditions has been performed. The dependence of the noise temperature on the electric field, doping level, and physical temperature has been investigated, and the results show the existence of threshold fields above which electron heating and partition noise due to intervalley scattering can make the cooling inefficient in terms of noise improvements. A comparison with available experimental data has also been made to verify the accuracy of the models used in the simulation.

Item Type:Article
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© 2000 IEEE.

Uncontrolled Keywords:Schottky-Barrier Diodes, Hot-Electron Noise, Semiconductors, Transport, Spectra, Mesfet.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:24774
Deposited On:20 Mar 2014 10:41
Last Modified:10 Dec 2018 14:58

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