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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P.S. and Diéguez, E. (1998) Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies. Solid State Communications, 108 (12). pp. 997-1000. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/S0038109898004451
Abstract
The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium.
Item Type: | Article |
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Additional Information: | © 1998 Elsevier Science Ltd. All rights reserved. |
Uncontrolled Keywords: | Liquid-Phase Epitaxy, Gallium Antimonide, Doped Gasb, Growth |
Subjects: | Sciences > Physics > Materials |
ID Code: | 24776 |
Deposited On: | 20 Mar 2014 18:22 |
Last Modified: | 31 Dec 2020 00:02 |
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