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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. and Diéguez, E. (1997) Influence of doping on the native acceptors of gallium antimonide. In Microscopy of Semiconducting Materials 1997. Conference Series- Institute of Physics (157). IOP Publishing LTD, pp. 527-530. ISBN 0-7503-0464-2
Abstract
Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with chromium and vanadium on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. Both impurities cause the reduction of the CL band at 775 meV (band A) attributed to a native acceptor. This effect is explained by the formation of a complex involving the dopant. CL images reveal the presence of precipitates and inhomogeneities in impurity distribution.
| Item Type: | Book Section |
|---|---|
| Additional Information: | © IOP Publishing LTD. |
| Uncontrolled Keywords: | Gasb, Photoluminescence |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 24790 |
| Deposited On: | 27 Mar 2014 19:00 |
| Last Modified: | 06 Jun 2014 17:39 |
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