Cathodoluminescence microscopy of doped GaSb crystals



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Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. and Dieguez, E. (1996) Cathodoluminescence microscopy of doped GaSb crystals. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 42 (1-mar). pp. 38-42. ISSN 0921-5107

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We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and doped (chromium) material. CL investigations have revealed a non uniform distribution of native defects in GaSb wafers. Post growth annealing in vacuum, gallium or antimony atmospheres causes an increase in homogeneity in CL images. Te diffusion and Cr doping provides new information about defects in GaSb. CL images and CL spectra recorded in these samples support that the type of defects formed is a function of diffusion time and impurity concentration.

Item Type:Article
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© 1996 - Elsevier Science S.A.
International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) (4.1996. El Escorial, Madrid).

Uncontrolled Keywords:Gallium Antimonide, Phase Epitaxy; P-Type, Photoluminescence, Defects
Subjects:Sciences > Physics > Materials
ID Code:24802
Deposited On:27 Mar 2014 19:08
Last Modified:31 Dec 2020 00:02

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