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Piqueras de Noriega, Javier and Méndez Martín, Bianchi and Panin, G. N. and Dutta, P. S. and Dieguez, E. (1996) Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide. In CAS '96 Proceedings - 1996 International Semiconductor Conference. I E E E, pp. 497-506. ISBN 0-7803-3223-7
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=557426
Abstract
Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different annealing and irradiation treatments.
Item Type: | Book Section |
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Additional Information: | © 1996 IEEE. |
Uncontrolled Keywords: | Engineering, Electrical & Electronic |
Subjects: | Sciences > Physics > Materials |
ID Code: | 24835 |
Deposited On: | 27 Mar 2014 19:24 |
Last Modified: | 02 Sep 2020 09:42 |
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