Sawtooth superlattices in a 2-band semiconductor

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Domínguez-Adame Acosta, Francisco and Méndez Martín, Bianchi (1994) Sawtooth superlattices in a 2-band semiconductor. Semiconductor Science and Technology, 9 (7). pp. 1358-1362. ISSN 0268-1242

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Official URL: http://iopscience.iop.org/0268-1242/9/7/010




Abstract

We consider electron dynamics in two-band semiconductor superlattices within the envelope function approximation. We develop a numerical method, based on the properties of the periodic continued fractions, to find the dispersion relation inside allowed minibands and to obtain the envelope functions. As an application, we concentrate on GaAs sawtooth-doped superlattices, consisting of periodic alternating n- and p-type delta-doped sheets separated by undoped material. Results are compared with one-band semiconductor predictions, and we find that coupling of bands in the host semiconductor indeed gives rise to relevant effects, especially for higher-minibands.


Item Type:Article
Additional Information:

© 1994 IOP Publishing Ltd.
The authors would like to thank E Macia and A Sfinchez for a critical reading of the manuscript. This work is partially supported by UCM under Project PR161/93-4811.

Uncontrolled Keywords:Dimensional Band Structures, Electric-Field,Transitions
Subjects:Sciences > Physics > Materials
ID Code:24859
Deposited On:02 Apr 2014 15:19
Last Modified:31 Dec 2020 00:02

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