Universidad Complutense de Madrid
E-Prints Complutense

Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs



Downloads per month over past year

Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1993) Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs. Semiconductor Science and Technology, 8 (3). pp. 320-321. ISSN 0268-1242

[thumbnail of MendezBianchi76.pdf]

Official URL: http://iopscience.iop.org/0268-1242/8/3/002


Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.

Item Type:Article
Additional Information:

© 1993 IOP Publishing Ldt.
This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017).

Uncontrolled Keywords:Dislocations, Behavior
Subjects:Sciences > Physics > Materials
ID Code:25042
Deposited On:09 Apr 2014 16:52
Last Modified:31 Dec 2020 00:02

Origin of downloads

Repository Staff Only: item control page