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Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1991) Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers. Journal of Applied Physics, 69 (5). pp. 2776-2779. ISSN 0021-8979
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Official URL: http://dx.doi.org/10.1063/1.348636
Abstract
Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.
Item Type: | Article |
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Additional Information: | © 1991 American institute of Physics. |
Uncontrolled Keywords: | Spatial-Distribution |
Subjects: | Sciences > Physics > Materials |
ID Code: | 25088 |
Deposited On: | 24 Apr 2014 16:15 |
Last Modified: | 24 Apr 2014 16:15 |
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