Publication: Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide
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Publication Date
2012-02-01
Authors
Villafranca Velasco, Aitor
Cheben, Pavel
Ortega Moñux, Alejandro
Alonso Ramos, Carlos Alberto
Molina fernández, Íñigo
Lapointe, Jean
Vachon, Martin
Janz, Siegfried
Xu, Dan-Xia
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The Optical Society Of America
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Abstract
The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 mu m. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm.
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© 2012 Optical Society of America.
Financial support from the Spanish Ministry of Science and Innovation (MICINN) is acknowledged under grants TEC2008-04105 and TEC2009-10152.
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