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Hidalgo Alcalde, Pedro and Cepeda Jiménez, C. M. and Ruano, O. A. and Carreño, F. (2010) Development of CdZnTe doped with Bi for gamma radiation detection. Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science, 12 (2). pp. 507-510. ISSN 1466-8033
Official URL: http://dx.doi.org/10.1039/b905810a
Abstract
Bulk CZT crystals doped with Bi (1 x 10(19) at/cm(3)) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 x 10(8) Omega cm , being smaller for the passivated sample, which at the same time had counter device properties.
| Item Type: | Article |
|---|---|
| Additional Information: | © The Royal Society of Chemistry 2010. |
| Uncontrolled Keywords: | Cadmium Zinc Telluride, Bridgman Method, Crystals, Cd1-Xznxte |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 25446 |
| Deposited On: | 14 May 2014 17:31 |
| Last Modified: | 20 May 2014 08:56 |
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