Publication: Development of CdZnTe doped with Bi for gamma radiation detection
No Thumbnail Available
Official URL
Full text at PDC
Publication Date
2010
Authors
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Royal Soc Chemistry
Citations
Exportar
Abstract
Bulk CZT crystals doped with Bi (1 x 10(19) at/cm(3)) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 x 10(8) Omega cm , being smaller for the passivated sample, which at the same time had counter device properties.
Description
© The Royal Society of Chemistry 2010.
This work was partially supported by the following projects: ESP2006-09935, Spanish ‘‘Ministerio de Educaci_on y Ciencia’’; S-0505/MAT-0279, Spanish ‘‘Comunidad de Madrid’’; FP7- SEC-2007-01, European Commission, and Contract number 14240/00/NL/SH, European Space Agency. V.C. is thankful to the Ministry of Education and Science, Spain for financial support. N.V. is grateful to Department of Science and Technology, Govt. of India for providing the BOYSCAST fellowship. J.R.F. is thankful to the Universidad Autónoma of Madrid for financial support.
UCM subjects
Unesco subjects
Keywords
Citation
1 (a) G. Yang, W. Jie, Q. Li, T. Wang, G. Q. Li and H. Hua, J. Cryst. Growth, 2005, 283, 431; (b) T. Wang, W. Jie, J. Zhang, G. Yang, D. Zeng, Y. Xu, S. Ma, H. Hua and K. He, J. Cryst. Growth, 2007, 304, 313; (c) M. Zha, A. Zappettini, D. Calestani, L. Marchini, L. Zanotti and C. Paorici, J. Cryst. Growth, 2008, 310, 2072; (d) I. Jung, H. Krawczynski, A. Burger, M. Guo and M. Groza, Astropart. Phys., 2007, 28, 397.
2 G. Sato, T. Takahashi, M. Sugiho, M. Kouda, T. Mitani, K. Nakazawa, Y. Okada and S. Watanabe, IEEE Trans. Nucl. Sci., 2002, 49, 1258.
3 T. E. Schlesinger, J. E. Toney, H. Yoon, E. Y. Lee, B. A. Brunett, L. Franks and R. B. James, Mater. Sci. Eng., R, 2001, 32, 103.
4 (a) Wang Xiaoqin, Jie Wanqi, Li Qiang and Gu Zhi, Mater. Sci. Semicond. Process., 2005, 8, 615; (b) Alireza Kargar, Andrew M. Jones, Walter J. McNeil, Mark J. Harrison and Douglas S. McGregor, Nucl. Instrum. Methods Phys. Res., Sect. A, 2006, 558, 497; (c) K. C. Mandal, S. H. Kang, M. Choi, A. Kargar, M. J. Harrison, D. S. McGregor, A. E. Bolotnikov, G. A. Carini, G. C. Camarda and R. B. James,IEEE Trans. Nucl. Sci., 2007, 54, 802.
5 G. A. Carini, A. E. Bolotnikov, G. S. Camarda, G. W. Wright, R. B. James and L. Li, Appl. Phys. Lett., 2006, 88, 143515.
6 (a) V. Carcelen, N. Vijayan, E. Dieguez, A. Zappettini, M. Zha, L. Sylla, A. Fauler and M. Fiederle, J. Optoelect. Adv. Mat., 2008, 10, 3135; (b) V. Carcelen, N. Vijayan, J. Rodriguez-Fernandez, P. Hidalgo, J. Piqueras, N. V. Sochinskii, J. M. Perez and E. Dieguez, J. Cryst. Growth, 2009, 311, 1264.
7 (a) E. Saucedo, O. Martinez, C. M. Ruiz, O. Vigil-Galan, I. Benito, L. Fornaro, N. V. Sochinskii and E. Dieguez, J. Cryst. Growth, 2006, 291, 416; (b) E. Saucedo, C. M. Ruiz, V. Bermudez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi and N. V. Sochinskii, J. Appl. Phys., 2006, 100, 104901.
8 (a) W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, K. K. Meyer, E. Weigel, G. Muller-Vogt, M. Salk, E. Rupp and K. W. Benz, € Phys. Rev. B: Condens. Matter Mater. Phys., 1995, 51, 10619; (b) J. L. Reno and E. D. Jones,Phys. Rev. B: Condens. Matter Mater. Phys., 1992, 45, 1440.