Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC



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Ottaviani, L. and Idrissi, H. and Hidalgo Alcalde, Pedro and Lancin, M. (2005) Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC. Physica Status Solidi C, 2 (6). pp. 1792-1796. ISSN 1610-1634

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This paper presents cathodoluminescence, electrical and structural characteristics of (11-20)-oriented 4H-SiC substrates, aiming at determining properties of some extended defects. As-grown basal plane dislocations with the Burgers vector b = 1/3 < 11-20 > previously revealed to be associated to a radiative recombination level at 1.80 eV. Well controlled dislocations were here introduced by annealing the sample under compressive stress at 973 K. After the annealing, double stacking faults were detected, formed by two Shockley partial dislocations gliding in two successive basal planes. These defects proved to introduce a rectifying behaviour during forward voltage operation, with a corresponding barrier height value of 0.58 eV at room temperature. Cathodoluminescence measurements allowed to attribute a radiative level at 1.80 eV to the extended defects, giving rise to a double luminescence peak.

Item Type:Article
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© 2005 WILEY-VCH Verlag GmbH.
International Conference on Extended Defects in Semiconductors (10. 2004. Chernogolovka, Rusia)

Uncontrolled Keywords:Materials Science, Multidisciplinary, Physics, Condensed Matter
Subjects:Sciences > Physics > Materials
ID Code:25548
Deposited On:04 Jun 2014 15:15
Last Modified:31 Dec 2020 00:03

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