Universidad Complutense de Madrid
E-Prints Complutense

Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography



Downloads per month over past year

Hidalgo Alcalde, Pedro and Ottaviani, L. and Idrissi, H. and Lancin, M. and Martinuzzi, S. and Pichaud, B. (2004) Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography. European Physical Journal-Applied Physics, 27 (1-mar). pp. 231-233. ISSN 1286-0042

Official URL: http://dx.doi.org/10.1051/epjap:2004100


Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The (11 (2) over bar0)-oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial (11 (2) over bar0) 4H n(+)-type substrates.

Item Type:Article
Additional Information:

© E D P Sciences
International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10). (10. 2003. Batz sur Mer, Francia).

Uncontrolled Keywords:Growth, Layers, Face
Subjects:Sciences > Physics > Materials
ID Code:25573
Deposited On:27 May 2014 17:55
Last Modified:27 May 2014 17:55

Origin of downloads

Repository Staff Only: item control page