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Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) The intermediate band approach in the third solar cell generation context. In Proceedings of the 2013 Spanish Conference on Electron Devices. IEEE, pp. 297-300. ISBN 978-1-4673-4666-5
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Official URL: http://dx.doi.org/10.1109/CDE.2013.6481401
Abstract
Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.
| Item Type: | Book Section |
|---|---|
| Additional Information: | Spanish Conference on Electron Devices-(CDE) (9.2013.Valladolid, España). Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken. |
| Uncontrolled Keywords: | Solar Cells. |
| Subjects: | Sciences > Physics > Electricity Sciences > Physics > Electronics |
| ID Code: | 25776 |
| Deposited On: | 10 Jun 2014 08:18 |
| Last Modified: | 10 Dec 2018 14:58 |
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