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Intermediate band mobility in heavily titanium-doped silicon layers

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Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Intermediate band mobility in heavily titanium-doped silicon layers. Solar Energy Materials and Solar Cells, 93 (9). pp. 1668-1673. ISSN 0927-0248

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Official URL: http://dx.doi.org/10.1016/j.solmat.2009.05.014




Abstract

The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of ail intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed.


Item Type:Article
Additional Information:

© 2009 Elsevier B.V. All rights reserved. This work has been supported by the project IBPOWER, funded by the European Commission under Contract no .211640, by the Regional Government of Madrid with in the project NUMANCIA (S-0505/ENE/000310) and by the Spanish National Research Program with in the project GENESIS-FV (CSD2006-0004).

Uncontrolled Keywords:Solar-Cells, Energy-Conversion, Efficiency, Recombination, Ionization, Iron.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:25892
Deposited On:17 Jun 2014 08:21
Last Modified:31 Dec 2020 00:03

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