Physical properties of high pressure reactively sputtered hafnium oxide



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Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2008) Physical properties of high pressure reactively sputtered hafnium oxide. Vacuum, 82 (12). pp. 1391-1394. ISSN 0042-207X

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Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering (HPRS) at pressures between 0.8 and 1.6 mbar. Growth, composition and morphology were investigated using Transmission Electron Microscopy (TEM), Heavy Ion Elastic Recoil Detection Analysis (HI-ERDA), Fourier Transform infrared spectroscopy (FTIR) and X-Ray Diffraction (XRD). The growth rate was found to decrease exponentially with deposition pressure. The films showed a monoclinic polycrystalline structure, with higher grain size for intermediate pressures. All the films were slightly oxygen rich with respect to stoichiometric HfO2, which is attributed to the oxygen plasma. Additionally, it was observed the formation of an interfacial silicon oxide layer, with a minimum thickness for deposition pressures around 1.2 mbar. These results are explained by the oxidation action of the oxygen plasma and the diffusion of oxygen through the grain boundaries of the HfO2 film.

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Iberian Vacuum Meeting (5.2005.Guimaraes,Portugal). © 2008 Elsevier Ltd. All rights reserved. The authors acknowledge C.A.I de Implantación Iónica (U.C.M.), C.A.I de Espectroscopía y Espectrometría and C.A.I. de Microscopía y Citometría for technical support. This work was made possible thanks to a FPU grant of the Spanish M.E.C. This work was also supported by the Spanish M.C.Y.T., under the contract TEC 2004-1237/MIC.

Uncontrolled Keywords:Electron-Cyclotron-Resonance, Thin-Films, Optical-Properties, Sioxnyhz Films, HFO2, ERDA, Si.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:25959
Deposited On:08 Jul 2014 07:59
Last Modified:31 Dec 2020 00:03

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