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Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2



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Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2007) Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2. Applied physics Letters, 91 (19). ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2811958


High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2 film in O-2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O-2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering.

Item Type:Article
Additional Information:

© 2007 American Institute of Physics. This work was partially supported by the Spanish M.E.C. under TEC2004 1237/MIC and TEC2007/63318 contracts.

Uncontrolled Keywords:Thin-Films.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:25981
Deposited On:08 Jul 2014 08:15
Last Modified:10 Dec 2018 14:58

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