Raman scattering characterization of implanted ZnO



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Mártil de la Plaza, Ignacio and González Díaz, Germán (2007) Raman scattering characterization of implanted ZnO. In Zinc Oxide and Related Materials. MRS Proceedings, 957 . Materials Research Society, pp. 235-240. ISBN 978-1-55899-914-5

Official URL: http://dx.doi.org/10.1557/PROC-0957-K07-24


In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+.

Item Type:Book Section
Additional Information:

Symposium on Zinc Oxide and Related Materials (2006. Boston, USA).

Uncontrolled Keywords:Modes.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26004
Deposited On:09 Jul 2014 07:38
Last Modified:10 Dec 2018 14:58

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