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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition



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Mártil de la Plaza, Ignacio and González Díaz, Germán and San Andres Serrano, Enrique (2005) A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition. Semiconductor Science and Technology, 20 (10). pp. 1044-1051. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/20/10/011


Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 or Ti(OC2H5)(4), and annealed at 750 degrees C in O-2, has been studied on silicon substrates. Our attention has been focused on the interfacial state and disordered-induced gap state densities. From our results, HPRS films annealed at 900 degrees C in oxygen atmosphere exhibit the best characteristics, with D-it density being the lowest value measured in this work (5-6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits. This result can be due to two contributions: the increase of the SiO2 film thickness and the crystallinity, since in the films annealed at 900 degrees C rutile is the dominant crystalline phase, as revealed by transmission electron microscopy and infrared spectroscopy. In the case of annealing in the range of 600-800 degrees C, anatase and rutile phases coexist. Disorder-induced gap state (DIGS) density is greater for 700 degrees C annealed HPRS films than for 750 degrees C annealed ALD TiO2 films, whereas 800 degrees C annealing offers DIGS density values similar to ALD cases. For ALD films, the studies clearly reveal the dependence of trap densities on the chemical route used.

Item Type:Article
Additional Information:

© 2005 IOP Publishing Ltd. The study was partially supported by the Spanish DGE-SIC under grant no. BFM 2001-2250 and TEC 2004-01237/MIC, and by the Estonian Science Foundation (grant no. 5861).

Uncontrolled Keywords:V Characteristics, Thin-Films, Interface.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26017
Deposited On:09 Jul 2014 08:22
Last Modified:31 Dec 2020 00:03

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